JPH0530350Y2 - - Google Patents

Info

Publication number
JPH0530350Y2
JPH0530350Y2 JP1984098957U JP9895784U JPH0530350Y2 JP H0530350 Y2 JPH0530350 Y2 JP H0530350Y2 JP 1984098957 U JP1984098957 U JP 1984098957U JP 9895784 U JP9895784 U JP 9895784U JP H0530350 Y2 JPH0530350 Y2 JP H0530350Y2
Authority
JP
Japan
Prior art keywords
nozzle
support
gas ejection
counterbore
center
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1984098957U
Other languages
English (en)
Japanese (ja)
Other versions
JPS6113929U (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9895784U priority Critical patent/JPS6113929U/ja
Publication of JPS6113929U publication Critical patent/JPS6113929U/ja
Application granted granted Critical
Publication of JPH0530350Y2 publication Critical patent/JPH0530350Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP9895784U 1984-06-30 1984-06-30 気相成長装置 Granted JPS6113929U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9895784U JPS6113929U (ja) 1984-06-30 1984-06-30 気相成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9895784U JPS6113929U (ja) 1984-06-30 1984-06-30 気相成長装置

Publications (2)

Publication Number Publication Date
JPS6113929U JPS6113929U (ja) 1986-01-27
JPH0530350Y2 true JPH0530350Y2 (en]) 1993-08-03

Family

ID=30658476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9895784U Granted JPS6113929U (ja) 1984-06-30 1984-06-30 気相成長装置

Country Status (1)

Country Link
JP (1) JPS6113929U (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102560432A (zh) * 2010-12-13 2012-07-11 北京北方微电子基地设备工艺研究中心有限责任公司 一种基片承载装置及应用该装置的基片处理设备

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58142935A (ja) * 1982-02-19 1983-08-25 Toray Silicone Co Ltd プライマ−組成物

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102560432A (zh) * 2010-12-13 2012-07-11 北京北方微电子基地设备工艺研究中心有限责任公司 一种基片承载装置及应用该装置的基片处理设备

Also Published As

Publication number Publication date
JPS6113929U (ja) 1986-01-27

Similar Documents

Publication Publication Date Title
US4825809A (en) Chemical vapor deposition apparatus having an ejecting head for ejecting a laminated reaction gas flow
EP1386981B1 (en) A thin film-forming apparatus
JPH04218916A (ja) 熱処理装置
JP2019519933A (ja) コーティングされた半導体ウエハを製造するための方法および装置
JPH0530350Y2 (en])
US4290385A (en) Vertical type vapor-phase growth apparatus
JP2781814B2 (ja) 縦形気相成長装置
JP3731844B2 (ja) 気相薄膜成長装置及びそれを用いた気相薄膜成長方法
CN210560739U (zh) 化学气相沉积气体供应系统及设备
JP4613451B2 (ja) エピタキシャルウェーハの製造方法
JPH1050615A (ja) 枚葉式気相成長装置
JPS6058613A (ja) エピタキシャル装置
JP2004014535A (ja) 気相成長装置及び気相成長方法、並びに基体保持用サセプタ
JP3534866B2 (ja) 気相成長方法
JPS6316617A (ja) 気相成長装置
JPH0437901Y2 (en])
JP2681469B2 (ja) 半導体基板のエピタキシャル成長方法
JPS63199412A (ja) 気相成長装置
JPH02212393A (ja) 気相成長方法及びその装置
JPH03291916A (ja) サセプタ
JPH09153461A (ja) 半導体製造装置
JPH0527502Y2 (en])
JPH0319324A (ja) 気相成長装置
JPH0662534U (ja) 化学気相成長装置
JPS60170233A (ja) 半導体製造装置